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| jmnic product specification silicon npn power transistors 2SC4369 description ? with to-220f package ? complement to type 2sa1658 ? good linearity of h fe applications ? for general purpose applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 30 v v ceo collector-emitter voltage open base 30 v v ebo emitter-base voltage open collector 5 v i c collector current 3 a i b base current 0.3 a p c collector dissipation t c =25 ?? 15 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
jmnic product specification 2 silicon npn power transistors 2SC4369 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 30 v v cesat collector-emitter saturation voltage i c =2a ;i b =0.2a 0.8 v v be base-emitter on voltage i c =0.5a ; v ce =2v 1.0 v i cbo collector cut-off current v cb =20v; i e =0 1.0 | a i ebo emitter cut-off current v eb =5v; i c =0 1.0 | a h fe-1 dc current gain i c =0.5a ; v ce =2v 70 240 h fe-2 dc current gain i c =2.5a ; v ce =2v 25 f t transition frequency i c =0.5a ; v ce =2v 100 mhz ? h fe-1 classifications o y 70-140 120-240 jmnic product specification 3 silicon npn power transistors 2SC4369 package outline fig.2 outline dimensions |
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